![]() Optical identification of atomically thin dichalcogenide crystals. Measurement of the elastic properties and intrinsic strength of monolayer graphene. Fine structure constant defines visual transparency of graphene. Generalized formula for the electric tunnel effect between similar electrodes separated by a thin insulating film. Solid lubricant materials for high temperatures-a review. Influence of quantum confinement on the electronic structure of the transition metal sulfide TS2. Graphene barristor, a triode device with a gate-controlled Schottky barrier. Hunting for monolayer boron nitride: optical and Raman signatures. Two-dimensional nanosheets produced by liquid exfoliation of layered materials. Field-effect tunneling transistor based on vertical graphene heterostructures. Electron tunneling through ultrathin boron nitride crystalline barriers. Coulomb drag of massless fermions in graphene. Strong Coulomb drag and broken symmetry in double-layer graphene. Tunable metal–insulator transition in double-layer graphene heterostructures. Nobel lecture: Graphene: materials in the flatland. Boron nitride substrates for high-quality graphene electronics. Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices. Electric field effect in atomically thin carbon films. ![]() These devices can also operate on transparent and flexible substrates. The combination of tunnelling (under the barrier) and thermionic (over the barrier) transport allows for unprecedented current modulation exceeding 1 × 10 6 at room temperature and very high ON current. ![]() Here, we describe a new generation of field-effect vertical tunnelling transistors where two-dimensional tungsten disulphide serves as an atomically thin barrier between two layers of either mechanically exfoliated or chemical vapour deposition-grown graphene. Indeed, there are many other materials with layers linked by weak van der Waals forces that can be exfoliated 3, 13 and combined together to create novel highly tailored heterostructures. The range of possible materials that could be incorporated into such stacks is very large. Such layered structures have already demonstrated a range of fascinating physical phenomena 8, 9, 10, 11, and have also been used in demonstrating a prototype field-effect tunnelling transistor 12, which is regarded to be a candidate for post-CMOS (complementary metal-oxide semiconductor) technology. An important milestone was the creation of heterostructures based on graphene and other two-dimensional crystals, which can be assembled into three-dimensional stacks with atomic layer precision 5, 6, 7. The celebrated electronic properties of graphene 1, 2 have opened the way for materials just one atom thick 3 to be used in the post-silicon electronic era 4.
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